High-performance driver and final stage device designed to offer industry-leading efficiency, gain and thermal resistance
Continuing to push the boundaries of high-power radio frequency (RF) technology, Freescale Semiconductor has unveiled the world’s first 50-volt LDMOS RF power transistor line-up for L-Band radar applications. The line-up is ideal for a wide range of high-power RF applications including air traffic management and long range weather radar.
The RF product line includes the MRF6V14300H final stage device and the MRF6V10010N driver. The MRF6V14300H produces pulsed RF output power of 330 W at frequencies between 1200 and 1400 MHz and sets new standards for efficiency, gain and thermal resistance at this power level and frequency when compared to competing bipolar and field-effect transistor (FET) devices.
“With our new RF portfolio announcement, we now demonstrate the capability of 50V LDMOS for avionics and radar applications at the L-Band frequency of 1.2 – 1.4 GHz,” said Gavin Woods, vice president and general manager of Freescale’s RF Division. “Not only have we leveraged the exceptional capabilities of Freescale’s LDMOS technology, we also have set new RF performance standards in several key figures of merit.”
The advanced line of RF power transistors – the first in Freescale’s 50 V RF power LDMOS avionics and radar portfolio – provides competitive advantages, such as a standard voltage supply, low cooling costs and high
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